H10D 30/0193
By modifying properties of the stacked channels
Official title: {by modifying properties of the stacked channels}
H10D30/0193 (By modifying properties of the stacked channels) appears on 252 US grants and 492 published applications in this corpus.
Search patents in H10D- Granted patents
- 252
- Published applications
- 492
- Assignees
- 37
- Inventors
- 803
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
| 2009 | 0 | 2 |
| 2010 | 1 | 2 |
| 2011 | 1 | 2 |
| 2012 | 1 | 1 |
| 2013 | 3 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 4 |
| 2016 | 9 | 9 |
| 2017 | 9 | 18 |
| 2018 | 14 | 8 |
| 2019 | 16 | 19 |
| 2020 | 15 | 24 |
| 2021 | 18 | 28 |
| 2022 | 22 | 49 |
| 2023 | 30 | 66 |
| 2024 | 31 | 70 |
| 2025 | 57 | 117 |
| 2026 | 23 | 70 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- FinFET device with partial interface dipole formation for reduction of gate induced drain leakage26 May 2026US 12,641,818 B2International Business Machines Corporation
- Stacked multi-gate device with barrier layers19 May 2026US 12,635,159 B2Taiwan Semiconductor Manufacturing Company.Ltd
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- Semiconductor structure having large silicide width and thick contact spacer and method for manufacturing the same10 Sep 2026US 2026/0271360 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of tuning gate dielectrics and the structures thereof13 Aug 2026US 2026/0239644 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate field effect transistors and methods of fabrication thereof6 Aug 2026US 2026/0231453 A1
Most cited
By later US patents
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Horizontal gate-all-around device having wrapped-around source and drain137US 10,109,721 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Methods of forming an isolated nano-sheet transistor device and the resulting device62US 9,984,936 B1Globalfoundries Inc. · 2018
- Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device60US 9,991,352 B1Globalfoundries Inc. · 2018
- Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same45US 7,642,578 B2Samsung Electronics Co., Ltd. · 2010