Semiconductor structure having large silicide width and thick contact spacer and method for manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• forming a patterned structure having
• a source/drain feature,
• a channel portion located adjacent to the source/drain feature, and
• a gate structure formed over the channel portion;
• forming a silicide layer over the source/drain feature;
• forming a contact spacer over a first region of the silicide layer;
• and
• forming a conductive feature over a second region of the silicide layer, the second region of the silicide layer being different from the first region.

A semiconductor structure, comprising:

• an active region extending lengthwise along a first direction;
• a channel portion disposed on the active region;
• a gate structure disposed over the channel portion and extending lengthwise along a second direction different from the first direction;
• a source/drain feature disposed on the active region connected to the channel portion;
• and
• a silicide layer, a cap feature, and a conductive feature sequentially disposed on the source/drain feature,
• a width of the conductive feature being smaller than a width of the cap feature along both the first direction and the second direction.