Field effect transistor with multiple hybrid fin structure and method

A device comprising:

• a substrate;
• a first vertical stack of nanostructures over the substrate;
• a second vertical stack of nanostructures offset from the first vertical stack in a first direction;
• a gate structure over and wrapping around the first vertical stack of nanostructures;
• a first source/drain region abutting the first vertical stack of nanostructures in a second direction, the second direction being substantially perpendicular to the first direction;
• a second source/drain region abutting the second vertical stack of nanostructures in the second direction;
• a first hybrid fin between the first vertical stack and the second vertical stack, the first hybrid fin extending in the second direction;
• a first second hybrid fin between the first source/drain region and the first hybrid fin;
• and
• a second second hybrid fin between the second source/drain region and the first hybrid fin, wherein a bottom of the first hybrid fin is vertically offset from bottoms of the second and second second hybrid fins.

A device, comprising:

• a substrate;
• a first vertical stack of nanostructures over the substrate;
• a second vertical stack of nanostructures over the substrate and offset from the first vertical stack in a first direction;
• an isolation structure between the first vertical stack of nanostructures and the second vertical stack of nanostructures;
• a first gate structure over and wrapping around the first vertical stack of nanostructures;
• a second gate structure over and wrapping around the second vertical stack of nanostructures;
• a first hybrid fin extending along a second direction, the second direction being substantially perpendicular to the first direction, between the first and second vertical stacks, wherein the first hybrid fin extends under and through the first and second gate structures, the first hybrid fin at least partially in the isolation structure;
• a first second hybrid fin disposed between the first vertical stack and the first hybrid fin, the first second hybrid fin extending along the first direction and not extending under the first gate structure, the first second hybrid fin over the isolation structure;
• a second second hybrid fin disposed between the second vertical stack and the first hybrid fin, the second second hybrid fin extending along the first direction and not extending under the second gate structure, the second second hybrid fin over the isolation structure, the first second hybrid fin and the second second hybrid fin being a separate layer from the first hybrid fin.