H10D 30/0198
Forming source or drain electrodes wherein semiconductor bodies are replaced by dielectric
Official title: {forming source or drain electrodes wherein semiconductor bodies are replaced by dielectric layers and the source or drain electrodes extend through the dielectric layers}
H10D30/0198 (Forming source or drain electrodes wherein semiconductor bodies are replaced by dielectric) appears on 234 US grants and 772 published applications in this corpus.
Search patents in H10D- Granted patents
- 234
- Published applications
- 772
- Assignees
- 22
- Inventors
- 916
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 2 |
| 2021 | 1 | 14 |
| 2022 | 16 | 52 |
| 2023 | 24 | 120 |
| 2024 | 46 | 166 |
| 2025 | 78 | 262 |
| 2026 | 68 | 156 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Wrap around backside source/drain contact6 Oct 2026US 12,757,469 B2International Business Machines Corporation
- 3D source and drain contacts tuned for vertically stacked PMOS and NMOS22 Sep 2026US 12,745,428 B2Intel Corporation
- Structure with self-aligned offset gate contact and direct backside contact8 Sep 2026US 12,733,240 B2International Business Machines Corporation
- Placeholder with dielectric liner protection to prevent direct backside contact (DBC) from shorting to gate25 Aug 2026US 12,720,853 B2International Business Machines Corporation
- Direct backside contact with replacement backside dielectric25 Aug 2026US 12,721,147 B2International Business Machines Corporation
- Semiconductor structure and method for manufacturing the same24 Sep 2026US 2026/0293262 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate-all-around integrated circuit structures having depopulated channel structures using directed bottom-up approach17 Sep 2026US 2026/0282447 A1Intel Foundry IP LLC
- Semiconductor device and method for fabricating thereof10 Sep 2026US 2026/0271353 A1Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof27 Aug 2026US 2026/0255650 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device27 Aug 2026US 2026/0255651 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor devices with backside power rail and backside self-aligned via17US 11,355,601 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Semiconductor device10US 9,397,179 B1Samsung Electronics Co., Ltd. · 2016
- Source/drain contact structure7US 11,532,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Semiconductor device having stepped multi-stack transistor structure6US 11,502,167 B2Samsung Electronics Co., Ltd. · 2022
- Semiconductor device with backside spacer and methods of forming the same5US 11,276,643 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022