Semiconductor device and method for fabricating thereof

A semiconductor device comprising:

• a backside wiring line comprising a first side and a second side opposite to the first side in a first direction;
• a lower pattern on the first side of the backside wiring line, the lower pattern comprising a first side and a second side opposite to the first side in the first direction, wherein the second side of the lower pattern faces the backside wiring line;
• a sheet pattern on the first side of the lower pattern, and that is spaced apart from the lower pattern in the first direction;
• a first source/drain pattern contacting the lower pattern and connected to the sheet pattern;
• a gate structure on the first side of the lower pattern, the gate structure comprising a gate insulating film and a gate electrode that enclose the sheet pattern, wherein the gate electrode extends in a second direction intersecting the first direction;
• an active region insulating pattern contacting the lower pattern and the gate structure;
• and
• a backside source/drain contact connected to the first source/drain pattern and the backside wiring line, the backside source/drain contact extending through the active region insulating pattern, and being below the first source/drain pattern in the first direction.

A semiconductor device comprising:

• a backside wiring line comprising a first side and a second side opposite to the first side in a first direction;
• a lower pattern on the first side of the backside wiring line, the lower pattern comprising a first side and a second side opposite to the first side in the first direction, wherein the second side of the lower pattern faces the backside wiring line;
• a sheet pattern on the first side of the lower pattern, and that is spaced apart from the lower pattern in the first direction;
• a first source/drain pattern contacting the lower pattern and connected to the sheet pattern;
• a gate structure on the first side of the lower pattern, the gate structure comprising a gate insulating film and a gate electrode that enclose the sheet pattern, wherein the gate electrode extends in a second direction intersecting the first direction;
• an active region insulating pattern contacting the lower pattern and the gate structure;
• and
• a backside source/drain contact connected to the first source/drain pattern and the backside wiring line, and the backside source/drain contact being below the first source/drain pattern in the first direction,
• wherein the second side of the lower pattern is above a surface of the active region insulating pattern in the first direction.