Semiconductor device

A semiconductor device comprising:

• an active pattern extending in a first horizontal direction;
• a gate electrode extending in a second horizontal direction that is different from the first horizontal direction on the active pattern;
• a first source/drain region on a first side of the gate electrode, wherein the first source/drain region is on the active pattern;
• a second source/drain region on a second side of the gate electrode, opposite to the first side of the gate electrode in the first horizontal direction, wherein the second source/drain region is on the active pattern;
• a first source/drain contact beneath the first source/drain region, the first source/drain contact extending through the active pattern in a vertical direction, the first source/drain contact electrically connected to the first source/drain region;
• a second source/drain contact beneath the second source/drain region, the second source/drain contact extending through the active pattern in the vertical direction, the second source/drain contact electrically connected to the second source/drain region;
• and
• an air gap between the first and second source/drain contacts, the air gap overlapping with the gate electrode in the vertical direction,
• wherein a width of the air gap in the second horizontal direction is greater than a width of the first source/drain contact in the second horizontal direction.

A semiconductor device comprising:

• an insulating pattern;
• an active pattern extending in a first horizontal direction on an upper surface of the insulating pattern, the active pattern including silicon;
• a plurality of nanosheets stacked and spaced apart from each other in a vertical direction on the active pattern;
• a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets;
• a first source/drain region on a first side of the gate electrode on the active pattern;
• a second source/drain region on a second side of the gate electrode, opposite to the first side of the gate electrode in the first horizontal direction, on the active pattern;
• a first source/drain contact beneath the first source/drain region, the first source/drain contact extending through the insulating pattern and the active pattern in the vertical direction, the first source/drain contact electrically connected to the first source/drain region;
• a second source/drain contact beneath the second source/drain region, the second source/drain contact extending through the insulating pattern and the active pattern in the vertical direction, the second source/drain contact electrically connected to the second source/drain region;
• an isolation trench beneath the plurality of nanosheets, the isolation trench extending through the active pattern in the vertical direction;
• an air gap inside the isolation trench and overlapping with the gate electrode in the vertical direction;
• and
• a liner layer along sidewalls and an upper surface of the isolation trench, the liner layer spaced apart from each of the first and second source/drain contacts in the first horizontal direction, at least a portion of the liner layer between the air gap and the gate electrode,
• wherein at least a portion of the active pattern is between the liner layer and each of the first and second source/drain contacts, and
• wherein a width of the air gap in the second horizontal direction is greater than a width of the first source/drain contact in the second horizontal direction.