High density nanosheet diodes
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Geng Wang, Qintao Zhang
Life of this patent
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Abstract
Embodiments are directed to a method for forming a semiconductor structure by depositing a stack of alternating layers of two materials over a substrate and defining field-effect transistor and diode regions. The method further includes depositing a mask, where the mask covers only the field-effect transistor region while leaving the diode region uncovered. The method further includes doping the material in the diode region with a dopant, implanting epitaxial material with another dopant to form PN junctions, stripping the mask from the structure, forming a metal gate conductor over the field-effect transistor region, and depositing a metal over the substrate to create terminals.
Claims9
A method for forming a semiconductor structure, the method comprising:
- providing a substrate having a field-effect transistor region and a diode region;
- forming a first stack of layers of a first material alternating with layers of a second material at the field-effect transistor region;
- forming a second stack of the layers of the first material alternating with the layers of the second material at the diode region;
- epitaxially growing a third material having a first dopant at opposing sidewalls of the second stack;
- removing the first material;
- depositing a mask over the first stack, wherein the mask covers the field-effect transistor region while leaving the diode region uncovered;
- doping the second material at the diode region with a second dopant,
- wherein a conductivity type of the second material having the second dopant is the same as a conductivity type of the third material having the first dopant;
- epitaxially growing a fourth material with a third dopant, wherein the fourth material wraps around each of the layers of the second material at the diode region to make a third stack comprising the layers of the second material alternating with layers of the fourth material, wherein a conductivity type of the fourth material having the third dopant is opposite to the conductivity type of the second material having the second dopant and the conductivity type of the third material having the first dopant;
- and
- depositing a metalizing contact material over the substrate, wherein both the field-effect transistor region and the diode region include terminals.
Dependencies are inferred from the claim text.