H10D 30/017
Of fets having two-dimensional material channels
Official title: {of FETs having two-dimensional material channels, e.g. TMD FETs}
H10D30/017 (Of fets having two-dimensional material channels) appears on 284 US grants and 440 published applications in this corpus.
Search patents in H10D- Granted patents
- 284
- Published applications
- 440
- Assignees
- 124
- Inventors
- 808
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 2 |
| 2005 | 1 | 6 |
| 2006 | 1 | 0 |
| 2007 | 3 | 3 |
| 2008 | 2 | 1 |
| 2009 | 1 | 0 |
| 2010 | 1 | 6 |
| 2011 | 5 | 8 |
| 2012 | 3 | 19 |
| 2013 | 15 | 23 |
| 2014 | 20 | 31 |
| 2015 | 30 | 25 |
| 2016 | 18 | 27 |
| 2017 | 22 | 25 |
| 2018 | 32 | 31 |
| 2019 | 36 | 25 |
| 2020 | 24 | 22 |
| 2021 | 11 | 10 |
| 2022 | 16 | 12 |
| 2023 | 9 | 24 |
| 2024 | 12 | 20 |
| 2025 | 16 | 54 |
| 2026 | 5 | 66 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Back-end-of-line 2D transistor8 Sep 2026US 12,733,197 B2Intel Corporation
- Stacked multi-gate device with barrier layers19 May 2026US 12,635,159 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic device including the same19 May 2026US 12,635,204 B2Samsung Electronics Co., Ltd.
- Semiconductor device and manufacturing method thereof17 Feb 2026US 12,557,345 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor and method for making the same20 Jan 2026US 12,532,496 B2Hon Hai Precision Industry Co., Ltd.
- Gate structures with protection layer for semiconductor devices8 Oct 2026US 2026/0313977 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Backside contact to devices with wide source/drain regions8 Oct 2026US 2026/0314042 A1Intel Corporation
- Conversion of metal/metal oxide materials to semiconducting transition metal dichalcogenide materials in gate-all-around (gaa) transistor devices1 Oct 2026US 2026/0304818 A1Intel Corporation
- Strain engineering in two-dimensional materials for high-performance transistors1 Oct 2026US 2026/0304819 A1Intel Corporation
- Device including two dimensional junction between van der waals material and electrode, and manufacturing method thereof1 Oct 2026US 2026/0304820 A1Postech Research and Business Development Foundation
Most cited
By later US patents
- Hydrazine-free solution deposition of chalcogenide films67US 7,094,651 B2International Business Machines Corporation · 2006
- Field effect transistor and method of fabrication59US 6,825,506 B2Intel Corporation · 2004
- Solution deposition of chalcogenide films58US 6,875,661 B2International Business Machines Corporation · 2005
- Solution deposition of chalcogenide films containing transition metals49US 7,341,917 B2International Business Machines Corporation · 2008
- Nanosheet field-effect transistors including a two-dimensional semiconducting material35US 10,388,732 B1Globalfoundries Inc. · 2019