Solution deposition of chalcogenide films containing transition metals
AssigneeInternational Business Machines Corporation
InventorsDelia J. Milliron, David B. Mitzi
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Abstract
Metal chalcogenide films comprising at least one transition metal chalcogenide are prepared by dissolving a metal chalcogenide containing at least one transition metal chalcogenide in a hydrazine compound and, optionally, an excess of chalcogen to provide a precursor of the metal chalcogenide; applying a solution of said precursor onto a substrate to produce a film of said precursor; and annealing the film of the precursor to produce the metal chalcogenide film comprising at least one transition metal chalcogenide. The process can be used to prepare field-effect transistors and photovoltaic devices.
Claims27
A method of depositing a film of a metal chalcogenide comprising at least one transition metal chalcogenide which comprises
- dissolving a metal chalcogenide containing at least one transition metal chalcogenide in a hydrazine compound and optionally, an excess of chalcogen to provide a precursor of the metal chalcogenide;
- applying a solution of said precursor onto a substrate to produce a film of said precursor;
- and
- annealing the film of the precursor to produce the metal chalcogenide film comprising at least one transition metal chalcogenide on the substrate.
A method of preparing an improved field-effect transistor of the type having a source region and a drain region, a channel layer extending between the source region and the drain region, the channel layer including a semiconducting material, a gate region, disposed in spaced adjacency to the channel layer, an electrically insulating layer between the gate region and the source region, drain region and channel layer, wherein the method comprises:
- preparing a channel layer comprising a film of a transition metal chalcogenide semiconducting material by dissolving a metal chalcogenide containing at least one transition metal chalcogenide in hydrazine and an excess of chalcogen to provide a precursor of the metal chalcogenide;
- applying a solution of said precursor onto a substrate to produce a film of said precursor;
- and
- annealing the film of the precursor to produce the metal chalcogenide film comprising at least one transition metal chalcogenide on said substrate.
Dependencies are inferred from the claim text.