Field effect transistor and method for making the same
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsXuan-Zhang Li, Yang Wei, Shou-Shan Fan, Yue-Gang Zhang
Life of this patent
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Abstract
A field effect transistor includes a gate electrode, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer is located on the surface of the gate electrode, and the channel layer is located on the surface of the insulating layer away from the gate electrode. The source electrode and the drain electrode are spaced apart from each on the surface of the channel layer away from the insulating layer. The source electrode and the drain electrode are one-dimensional structures. The present application further provides a method for making the field effect transistor.
Claims15
A field effect transistor comprising:
- a gate electrode;
- an insulating layer, wherein the insulating layer is located on a surface of the gate electrode;
- a source electrode;
- a drain electrode;
- and
- a channel layer, wherein the insulating layer is between the channel layer and the gate electrode, the source electrode and the drain electrode are deposited spaced apart from each other on the channel layer, and the channel layer is between the source and the drain electrodes and the insulating layer;
- wherein each of the source electrode and the drain electrode is a one-dimensional structure with a same chirality.
A field effect transistor comprising:
- a gate electrode;
- an insulating layer, wherein the insulating layer is located on a surface of the gate electrode;
- a first strand of carbon nanotube of carbon and metal atoms arranged in a single-walled structure, the first strand of carbon nanotube being a source electrode;
- a second strand of carbon nanotube of carbon and metal atoms arranged in a single-walled structure, the second strand of carbon nanotube being a drain electrode;
- and
- a channel layer, wherein the insulating layer is between the channel layer and the gate electrode, and the channel layer is sandwiched between the source and the drain electrodes and the insulating layer;
- wherein each of the source electrode and the drain electrode is a one-dimensional structure with a same chirality.
A method for making a field effect transistor, the method comprising:
- forming an insulating layer on a surface of a gate;
- forming a channel layer on a surface of an insulating layer, the insulating layer being sandwiched between the channel layer and the gate;
- placing two one-dimensional structures spaced apart from each other on a surface of the channel layer, the channel layer being sandwiched between the two one-dimensional structure and the insulating layer, wherein the two one-dimensional structures are electrically conductive;
- and
- forming a plurality of electrodes on the two one-dimensional structures and on the surface of the channel layer where the two one-dimensional structures are located, wherein the plurality of electrodes are spaced apart from each other.
Dependencies are inferred from the claim text.