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US 12,635,204 B2Granted
Semiconductor device and electronic device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChanghyun Kim, Minsu Seol, Junyoung Kwon, Keunwook Shin, Minseok Yoo
Life of this patent
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Abstract
A semiconductor device includes a channel including a two-dimensional (2D) semiconductor material, a source electrode and a drain electrode electrically connected to opposite sides of the channel, respectively, a transition metal oxide layer on the channel and including a transition metal oxide, a dielectric layer on the transition metal oxide layer and including a high-k material, and a gate electrode on the dielectric layer.
Claims17
A semiconductor device, comprising:
- a substrate;
- a first channel layer and a second channel layer, the first channel layer and the second channel layer each including a two-dimensional (2D) semiconductor material and being spaced apart from each other in a direction that extends away from the substrate;
- a source electrode and a drain electrode electrically connected to opposite sides of the first channel layer and the second channel layer, respectively;
- a first transition metal oxide layer on the first channel layer and a second transition metal oxide layer on the second channel layer, the first transition metal oxide layer and the second transition metal oxide layer each including a transition metal oxide;
- a first dielectric layer on the first transition metal oxide layer and a second dielectric layer on the second transition metal oxide layer, the first dielectric layer and the second dielectric layer each including a high-k material;
- and
- a gate electrode on the first dielectric layer and the second dielectric layer,
- wherein the first channel layer and the second channel layer are configured to exhibit different threshold voltages, based on respective materials of the first transition metal oxide layer, the first dielectric layer, the second transition metal oxide layer, and the second dielectric layer.
5 more elements
An electronic device, comprising:
- a substrate;
- and
- a plurality of semiconductor devices arranged on the substrate,
- wherein each semiconductor device of the plurality of semiconductor devices includes
- a first channel layer and a second channel layer, the first channel layer and the second channel layer each including a two-dimensional (2D) semiconductor material and being spaced apart from each other in a direction that extends away from the substrate;
- a source electrode and a drain electrode electrically connected to opposite sides of the first channel layer and the second channel layer, respectively;
- a first transition metal oxide layer on the first channel layer and a second transition metal oxide layer on the second channel layer, the first transition metal oxide layer and the second transition metal oxide layer each including a transition metal oxide;
- a first dielectric layer on the first transition metal oxide layer and a second dielectric layer on the second transition metal oxide layer, the first dielectric layer and the second dielectric layer each including a high-k material;
- and
- a gate electrode on the first dielectric layer and the second dielectric layer, and
- wherein the plurality of semiconductor devices are configured to exhibit different threshold voltages.
8 more elements
Dependencies are inferred from the claim text.