Hydrazine-free solution deposition of chalcogenide films
AssigneeInternational Business Machines Corporation
InventorsDavid B Mitzi, Matthew W Copel
Life of this patent
Estimating the term…
Abstract
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
Claims52
A method of depositing a film of a metal chalcogenide, comprising the steps of:
- contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof;
- applying said solution of said complex onto a substrate to produce a coating of said solution on said substrate;
- removing said solvent from said coating to produce a film of said complex on said substrate;
- and thereafter
- annealing said film of said complex to produce a metal chalcogenide film on said substrate.
A method of preparing a multilayer film on a substrate, said multilayer film having a plurality of metal chalcogenide films;
- wherein each of said metal chalcogenide films is prepared by a method comprising the steps of:
- (a) contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof;
- (b) applying said solution of said complex onto a substrate to produce a coating of said solution on said substrate;
- (c) removing said solvent from said coating to produce a film of said complex on said substrate;
- and thereafter
- (d) annealing said film of said complex to produce a metal chalcogenide film on said substrate;
- and
- (e) repeating steps (a), (b), (c) and (d) with the same or different chalcogenide to produce said multilayer film.
A method of preparing a multilayer film on a substrate, said multilayer film having a plurality of metal chalcogenide films;
- wherein each o said metal chalcogenide films is prepared by a method comprising steps of:
- (a) contacting a metal chalcogenide and (i) a hydrazine compound, optionally in the presence of additional amount of an elemental chalcogen, or (ii) first a salt of an amine compound with H2S, H2Se or H2Te, and thereafter a hydrazine compound, to produce a solution of a hydrazinium-based precursor of said metal chalcogenide;
- (b) applying said solution of said hydrazinium-based precursor of said metal chalcogenide onto a substrate to produce a film of said precursor;
- (c) annealing said film of said precursor under conditions sufficient to produce said metal chalcogenide film;
- and
- (d) repenting steps (a), (b) and (a) with the same or different chalcogenide to produce said multilayer film.
Dependencies are inferred from the claim text.