H10D 30/015
Of fets having heterojunction interface channels or heterojunction gate electrodes
Official title: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
H10D30/015 (Of fets having heterojunction interface channels or heterojunction gate electrodes) appears on 4,346 US grants and 5,515 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,346
- Published applications
- 5,515
- Assignees
- 661
- Inventors
- 4,741
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 5 | 0 |
| 1992 | 11 | 0 |
| 1993 | 13 | 0 |
| 1994 | 23 | 0 |
| 1995 | 28 | 0 |
| 1996 | 13 | 0 |
| 1997 | 29 | 0 |
| 1998 | 23 | 0 |
| 1999 | 24 | 0 |
| 2000 | 26 | 0 |
| 2001 | 25 | 10 |
| 2002 | 23 | 32 |
| 2003 | 28 | 27 |
| 2004 | 25 | 52 |
| 2005 | 28 | 56 |
| 2006 | 37 | 74 |
| 2007 | 34 | 87 |
| 2008 | 35 | 109 |
| 2009 | 63 | 102 |
| 2010 | 96 | 135 |
| 2011 | 107 | 164 |
| 2012 | 107 | 222 |
| 2013 | 176 | 303 |
| 2014 | 276 | 386 |
| 2015 | 345 | 325 |
| 2016 | 317 | 288 |
| 2017 | 299 | 294 |
| 2018 | 240 | 227 |
| 2019 | 244 | 296 |
| 2020 | 275 | 310 |
| 2021 | 217 | 296 |
| 2022 | 218 | 356 |
| 2023 | 212 | 365 |
| 2024 | 262 | 421 |
| 2025 | 289 | 344 |
| 2026 | 162 | 234 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- High electron mobility transistor epitaxial structure that includes carbon doped nitride layers6 Oct 2026US 12,757,526 B2GlobalWafers Co., Ltd.
- Carrier structure for etch-back silicon-on-insulator process8 Oct 2026US 2026/0313929 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High electron mobility transistor and method for forming the same8 Oct 2026US 2026/0313930 A1United Microelectronics Corp.
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
- Semiconductor device and method of making8 Oct 2026US 2026/0314015 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Printable semiconductor structures and related methods of making and assembling272US 8,039,847 B2The Board of Trustees of the University of Illinois · 2011
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994