Semiconductor device and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHan Yu SHEN, Ruei-Hung JANG, Chun-Li FANG, Der-Ming KUO
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a source electrode over the substrate, a drain electrode over the substrate, a gate electrode between the source electrode and the drain electrode, and a multi-layer gate field plate (GAFP) including a bottom layer having a sidewall proximal the drain electrode. An angle of extension of an entirety of a bottom segment of the sidewall relative to a surface of the substrate is between about 50 degrees to about 130 degrees. The bottom segment of the sidewall spans at least about 25% of a vertical extent of the bottom layer.
Claims20
A method of forming a semiconductor device, comprising:
- forming an electrode layer over a first dielectric layer;
- performing a first etching operation to pattern the electrode layer and form:
- a gate electrode;
- a gate field plate (GAFP);
- a residual electrode layer adjacent the GAFP and overlying the first dielectric layer;
- first byproducts on the GAFP;
- and
- second byproducts on the residual electrode layer;
- performing a second etching operation to remove the second byproducts from the residual electrode layer and to remove a first portion of the first byproducts, wherein a second portion of the first byproducts remain on the GAFP after the second etching operation;
- and
- performing a third etching operation to remove the residual electrode layer.
A semiconductor device comprising:
- a substrate;
- a source electrode over the substrate;
- a drain electrode over the substrate;
- a gate electrode between the source electrode and the drain electrode;
- and
- a multi-layer gate field plate (GAFP) comprising a bottom layer having a sidewall proximal the drain electrode, wherein an angle of extension of an entirety of a bottom segment of the sidewall relative to a surface of the substrate is between about 50 degrees to about 130 degrees, wherein the bottom segment of the sidewall spans at least about 25% of a vertical extent of the bottom layer.
A method of forming a semiconductor device, comprising:
- performing a first etching operation to pattern an electrode layer, that is over a first dielectric layer, and form:
- a gate electrode;
- a gate field plate (GAFP);
- a residual electrode layer adjacent to the GAFP and overlying the first dielectric layer;
- first byproducts on a sidewall of the GAFP;
- and
- second byproducts on a surface of the residual electrode layer;
- performing a second etching operation to remove the second byproducts from the surface of the residual electrode layer and to remove a first portion of the first byproducts, wherein a second portion of the first byproducts remain on the sidewall of the GAFP after the second etching operation;
- and
- performing a third etching operation to remove the residual electrode layer.
Dependencies are inferred from the claim text.