H10D 30/061
Of fets having schottky gates
Official title: {of FETs having Schottky gates (H10D30/015 takes precedence)}
H10D30/061 (Of fets having schottky gates) appears on 770 US grants and 384 published applications in this corpus.
Search patents in H10D- Granted patents
- 770
- Published applications
- 384
- Assignees
- 241
- Inventors
- 1,224
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 8 | 0 |
| 1981 | 12 | 0 |
| 1982 | 11 | 0 |
| 1983 | 5 | 0 |
| 1984 | 10 | 0 |
| 1985 | 15 | 0 |
| 1986 | 10 | 0 |
| 1987 | 17 | 0 |
| 1988 | 23 | 0 |
| 1989 | 23 | 0 |
| 1990 | 28 | 0 |
| 1991 | 20 | 0 |
| 1992 | 21 | 0 |
| 1993 | 28 | 0 |
| 1994 | 29 | 0 |
| 1995 | 30 | 0 |
| 1996 | 37 | 0 |
| 1997 | 25 | 0 |
| 1998 | 22 | 0 |
| 1999 | 31 | 0 |
| 2000 | 24 | 0 |
| 2001 | 19 | 5 |
| 2002 | 14 | 13 |
| 2003 | 14 | 21 |
| 2004 | 17 | 19 |
| 2005 | 8 | 9 |
| 2006 | 12 | 12 |
| 2007 | 12 | 19 |
| 2008 | 9 | 11 |
| 2009 | 11 | 10 |
| 2010 | 11 | 18 |
| 2011 | 13 | 16 |
| 2012 | 12 | 16 |
| 2013 | 14 | 9 |
| 2014 | 15 | 19 |
| 2015 | 21 | 23 |
| 2016 | 28 | 18 |
| 2017 | 14 | 9 |
| 2018 | 14 | 21 |
| 2019 | 8 | 11 |
| 2020 | 18 | 7 |
| 2021 | 10 | 9 |
| 2022 | 7 | 5 |
| 2023 | 3 | 9 |
| 2024 | 6 | 39 |
| 2025 | 13 | 24 |
| 2026 | 5 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method for manufacturing the same7 Jul 2026US 12,677,608 B2Mitsubishi Electric Corporation
- Semiconductor device and method for manufacturing the same23 Jun 2026US 12,666,671 B2Kabushiki Kaisha Toshiba
- Methods to process 3D semiconductor devices and structures which have metal layers16 Jun 2026US 12,660,326 B2Monolithic 3D Inc.
- Laminated structure21 Apr 2026US 12,610,662 B2Japan Display Inc.
- Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment6 Jan 2026US 12,520,534 B2Powdec K. K.
- Metal-semiconductor field-effect transistors for gallium arsenide technologies20 Aug 2026US 2026/0247691 A1Skyworks Solutions, Inc.
- Diamond and semiconductor device6 Aug 2026US 2026/0231494 A1OOKUMA DIAMOND DEVICE Inc.
- Normally-off mode polarization super junction gan-based field effect transistor and electrical equipment25 Jun 2026US 2026/0181958 A1Powdec K. K.
- Semiconductor element11 Jun 2026US 2026/0164790 A1Japan Display Inc.
- Semiconductor device4 Jun 2026US 2026/0156857 A1NTT, Inc.
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self-aligned, high resolution resonant dielectric lithography478US 5,040,020 ACornell Research Foundation, Inc. · 1991
- Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same238US 6,586,781 B2Cree Lighting Company · 2003
- Method for forming a semiconductor device having a heteroepitaxial layer180US 5,891,769 AMotorola, Inc. · 1999
- Self-aligned recessed gate process150US 4,656,076 ATriquint Semiconductors, Inc. · 1987