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US 12,677,608 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsKoichiro Nishizawa, Daisuke Tsunami
Life of this patent
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Abstract
A substrate (1) having a GaN surface (2) is immersed in a catalyst metal solution (4) containing, potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal (5) on the GaN surface (2). A metal film (7) is formed on the GaN surface (2) having the catalyst metal (5) deposited thereon by electroless plating.
Claims7
A method for manufacturing a semiconductor device comprising:
- a photoelectrochemical etching step comprising:
- immersing a substrate having a GaN surface in a catalyst metal solution containing potassium hydroxide and a plating catalyst metal salt while the GaN surface is irradiated with ultraviolet light such that Ga from the GaN surface dissolves in the catalyst metal solution and creates electrons and the plating catalyst metal of the plating catalyst metal salt is deposited on the GaN surface using the electrons;
- and
- an electroless plating step comprising:
- forming a metal film on the GaN surface having the plating catalyst metal deposited thereon by immersing the substrate in an electroless plating solution.
2 more elements
Dependencies are inferred from the claim text.