Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode to the second electrode being along a first direction, the second electrode including a first electrode portion and a second electrode portion connected to the first electrode portion;
• a third electrode provided between the first electrode and the second electrode portion;
• a semiconductor member, the semiconductor member including
• a first semiconductor region of a first conductive type, the first semiconductor region including a first partial region, a second partial region, a third partial region and a fourth partial region, the first partial region being provided between the first electrode and the third electrode in the first direction, a second direction from the first partial region to the second partial region crossing the first direction, a position of the third partial region in the second direction being between a position of the first partial region in the second direction and a position of the second partial region in the second direction, the fourth partial region being provided between the second partial region and the first electrode portion, and
• a second semiconductor region of the first conductive type, an impurity concentration of the first conductive type in the second semiconductor region being higher than an impurity concentration of the first conductive type in the first semiconductor region, the second semiconductor region being provided between the third electrode and the first electrode portion in the second direction, the second semiconductor region being provided between the third partial region and the second electrode portion in the first direction;
• a first conductive member provided between the first partial region and the third electrode in the first direction, a direction from the first conductive member to the fourth partial region being along the second direction, the first conductive member being electrically connected to the second electrode or being configured to be electrically connected to the second electrode;
• and
• a first insulating member including a first insulating region, a second insulating region, and a third insulating region, the first insulating region being provided between the third electrode and the second semiconductor region, the second insulating region being provided between the semiconductor member and the first conductive member, at least a part of the third insulating region being provided between the first conductive member and the third electrode, the second insulating region including a first face facing the third partial region, the third insulating region including a second face facing the third partial region, the first face including a first end on a side of the second electrode in the first direction, the second face including a second end on a side of the first electrode in the first direction, a second position of the second end in the second direction being different from a first position of the first end in the second direction.