H10D 30/0612
Of lateral single-gate schottky fets
Official title: {of lateral single-gate Schottky FETs}
H10D30/0612 (Of lateral single-gate schottky fets) appears on 607 US grants and 216 published applications in this corpus.
Search patents in H10D- Granted patents
- 607
- Published applications
- 216
- Assignees
- 176
- Inventors
- 925
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 6 | 0 |
| 1981 | 6 | 0 |
| 1982 | 8 | 0 |
| 1983 | 4 | 0 |
| 1984 | 6 | 0 |
| 1985 | 15 | 0 |
| 1986 | 10 | 0 |
| 1987 | 17 | 0 |
| 1988 | 20 | 0 |
| 1989 | 21 | 0 |
| 1990 | 24 | 0 |
| 1991 | 19 | 0 |
| 1992 | 19 | 0 |
| 1993 | 26 | 0 |
| 1994 | 27 | 0 |
| 1995 | 28 | 0 |
| 1996 | 37 | 0 |
| 1997 | 24 | 0 |
| 1998 | 21 | 0 |
| 1999 | 26 | 0 |
| 2000 | 24 | 0 |
| 2001 | 16 | 5 |
| 2002 | 14 | 12 |
| 2003 | 11 | 17 |
| 2004 | 15 | 15 |
| 2005 | 5 | 6 |
| 2006 | 8 | 7 |
| 2007 | 6 | 7 |
| 2008 | 6 | 6 |
| 2009 | 6 | 5 |
| 2010 | 4 | 10 |
| 2011 | 7 | 12 |
| 2012 | 8 | 9 |
| 2013 | 10 | 5 |
| 2014 | 7 | 12 |
| 2015 | 15 | 17 |
| 2016 | 15 | 11 |
| 2017 | 9 | 5 |
| 2018 | 10 | 17 |
| 2019 | 5 | 8 |
| 2020 | 18 | 4 |
| 2021 | 3 | 4 |
| 2022 | 4 | 3 |
| 2023 | 0 | 4 |
| 2024 | 2 | 6 |
| 2025 | 3 | 4 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method for manufacturing the same7 Jul 2026US 12,677,608 B2Mitsubishi Electric Corporation
- Normally-off mode polarization super junction GaN-based field effect transistor and electrical equipment6 Jan 2026US 12,520,534 B2Powdec K. K.
- Bipolar junction transistor arrays4 Nov 2025US 12,464,745 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device and method for manufacturing the same14 Oct 2025US 12,446,287 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Method for manufacturing semiconductor device26 Aug 2025US 12,402,341 B2Sumitomo Electric Industries, Ltd.
- Metal-semiconductor field-effect transistors for gallium arsenide technologies20 Aug 2026US 2026/0247691 A1Skyworks Solutions, Inc.
- Diamond and semiconductor device6 Aug 2026US 2026/0231494 A1OOKUMA DIAMOND DEVICE Inc.
- Normally-off mode polarization super junction gan-based field effect transistor and electrical equipment25 Jun 2026US 2026/0181958 A1Powdec K. K.
- Semiconductor device, semiconductor module, and wireless communication apparatus12 Feb 2026US 2026/0047123 A1Sony Group Corporation
- Semiconductor structure8 Jan 2026US 2026/0013190 A1Enkris Semiconductor, Inc.
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self-aligned, high resolution resonant dielectric lithography478US 5,040,020 ACornell Research Foundation, Inc. · 1991
- Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same238US 6,586,781 B2Cree Lighting Company · 2003
- Self-aligned recessed gate process150US 4,656,076 ATriquint Semiconductors, Inc. · 1987
- Integrated circuit having a bulk acoustic wave device and a transistor113US 8,304,271 B22012