H10D 30/0616
Using processes wherein the final gate is made before the completion of
Official title: {using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes}
H10D30/0616 (Using processes wherein the final gate is made before the completion of) appears on 136 US grants and 23 published applications in this corpus.
Search patents in H10D- Granted patents
- 136
- Published applications
- 23
- Assignees
- 50
- Inventors
- 217
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 7 | 0 |
| 1988 | 6 | 0 |
| 1989 | 9 | 0 |
| 1990 | 8 | 0 |
| 1991 | 9 | 0 |
| 1992 | 6 | 0 |
| 1993 | 10 | 0 |
| 1994 | 10 | 0 |
| 1995 | 8 | 0 |
| 1996 | 17 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 7 | 0 |
| 2001 | 3 | 0 |
| 2002 | 0 | 3 |
| 2003 | 2 | 1 |
| 2004 | 4 | 2 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 3 |
| 2008 | 2 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 2 |
| 2012 | 2 | 1 |
| 2013 | 0 | 2 |
| 2014 | 2 | 2 |
| 2015 | 2 | 3 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 0 | 1 |
| 2025 | 0 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method for manufacturing the same7 Jul 2026US 12,677,608 B2Mitsubishi Electric Corporation
- Source/drain structure of semiconductor device18 Oct 2016US 9,472,647 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thin film hybrid junction field effect transistor28 Jul 2015US 9,093,548 B2International Business Machines Corporation
- Source/drain structure of semiconductor device27 Jan 2015US 8,940,640 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride based semiconductor device and method for manufacturing the same27 May 2014US 8,735,941 B2Samsung Electro-Mechanics Co., Ltd.
- Semiconductor device26 Dec 2024US 2024/0429297 A1Rohm Co., Ltd.
- Semiconductor device and method for manufacturing the same12 Oct 2023US 2023/0326758 A1Mitsubishi Electric Corporation
- Thin film hybrid junction field effect transistor19 Nov 2015US 2015/0333187 A1International Business Machines Corporation
- Method for manufacturing semiconductor device2 Jul 2015US 2015/0187892 A1Institute of Microelectronics, Chinese Academy of Sciences
- Source/Drain Structure of Semiconductor Device23 Apr 2015US 2015/0108543 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Self-aligned, high resolution resonant dielectric lithography478US 5,040,020 ACornell Research Foundation, Inc. · 1991
- Integrated circuit having a bulk acoustic wave device and a transistor113US 8,304,271 B22012
- Method of manufacturing a field effect transistor device having a multilayer gate electrode104US 4,769,339 AKabushiki Kaisha Toshiba · 1988
- Semiconductor device with refractory metal element68US 6,013,926 AMitsubishi Denki Kabushiki Kaisha · 2000
- Semiconductor device with reduced stress on gate electrode54US 5,341,015 AMitsubishi Denki Kabushiki Kaisha · 1994