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US 2023/0326758 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsKoichiro NISHIZAWA, Daisuke TSUNAMI
Life of this patent
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Abstract
A substrate (1) having a GaN surface (2) is immersed in a catalyst metal solution (4) containing potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal (5) on the GaN surface (2). A metal film (7) is formed on the GaN surface (2) having the catalyst metal (5) deposited thereon by electroless plating.
Claims19
A method for manufacturing a semiconductor device comprising:
- immersing a substrate having a GaN surface in a catalyst metal solution containing potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal on the GaN surface;
- and
- forming a metal film on the GaN surface having the catalyst metal deposited thereon by electroless plating.
A method for manufacturing a semiconductor device comprising:
- immersing a substrate having a GaN surface in a potassium hydroxide solution to which potassium peroxodisulfate is added, while being irradiated with ultraviolet light to etch the GaN surface;
- immersing the substrate having the etched GaN surface in a catalyst metal solution containing a plating catalyst metal salt to deposit a catalyst metal on the GaN surface;
- and
- forming a metal film on the GaN surface having the catalyst metal deposited thereon by electroless plating.
1 more element
A semiconductor device comprising:
- a substrate having a GaN surface
- a metal film formed on the GaN surface of the substrate and containing at least one of nickel and cobalt, and boron or phosphorus;
- and
- a platinum layer formed as a thin film or in an island shape at an interface between the GaN surface and the metal film.
1 more element
Dependencies are inferred from the claim text.