Integrated circuit having a bulk acoustic wave device and a transistor
OwnerJenn Hwa Huang, Bruce M. Greeninventors
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Abstract
A bulk GaN layer is on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region. A source/drain layer is over a first surface of the bulk GaN layer in the GaN transistor region. A gate electrode is formed over the source/drain layer. A first BAW electrode is formed over the first surface of the bulk GaN layer in the BAW device region. An opening is formed in a second surface of the substrate, opposite the first surface of the substrate, which extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer. A second BAW electrode is formed within the opening over the second surface of the bulk GaN layer.
Claims19
A method for making a structure using a substrate, a bulk GaN layer on a first surface of the substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region, and a source/drain layer over a first surface of the bulk GaN layer in the GaN transistor region, the method comprising:
- forming a gate electrode over the source/drain layer;
- forming a first BAW electrode over the first surface of the bulk GaN layer in the BAW device region;
- forming an opening in a second surface of the substrate, opposite the first surface of the substrate, wherein the opening extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer;
- and
- forming a second BAW electrode within the opening in the second surface of the substrate and in contact with the exposed second surface of the bulk GaN layer, wherein the first surface of the bulk GaN layer is between the source/drain layer and the second surface of the bulk GaN layer, and the first surface of the substrate is between the bulk GaN layer and the second surface of the substrate.
A method comprising:
- providing an epitaxially grown bulk GaN layer on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region adjacent the GaN transistor region, and a source/drain layer over a first surface of the bulk GaN layer;
- removing portions of the source/drain layer from the BAW device region;
- forming a source contact over the source/drain layer and a drain contact over the source/drain layer;
- forming a patterned metal layer over the source/drain layer in the GaN transistor region and over the first surface of the bulk GaN layer in the BAW device region, wherein the patterned metal layer comprises a first portion which forms a gate electrode over the source/drain layer in the GaN transistor region and a second portion which forms a first BAW electrode over the first surface of the bulk GaN layer in the BAW device region;
- forming an opening in a second surface of the substrate, opposite the first surface of the substrate, wherein the opening extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer;
- and
- forming a second BAW electrode within the opening in the second surface of the substrate and in contact with the exposed second surface of the bulk GaN layer, wherein the first surface of the bulk GaN layer is between the source/drain layer and the second surface of the bulk GaN layer, and the first surface of the substrate is between the bulk GaN layer and the second surface of the substrate.
Dependencies are inferred from the claim text.