Thin film hybrid junction field effect transistor
AssigneeInternational Business Machines Corporation
InventorsBahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
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Abstract
Junction field effect transistors are provided which include a gate junction located on a surface of a crystalline semiconductor material of a first conductivity type. The gate junction can be selected from one of a doped hydrogenated crystalline semiconductor material layer portion of a second conductivity type which is opposite the first conductivity type, a doped hydrogenated non-crystalline semiconductor material layer portion of a second conductivity type which is opposite the first conductivity type, and a Schottky contact.
Claims17
A junction field effect transistor comprising:
- a crystalline semiconductor material of a first conductivity type located on a surface of an insulating substrate;
- and
- a gate junction located on a surface of the crystalline semiconductor material, wherein said gate junction comprises a doped hydrogenated crystalline semiconductor material layer portion of a second conductivity type, wherein said second conductivity type is opposite from the first conductivity type and wherein said doped hydrogenated crystalline semiconductor material layer portion has a hydrogen concentration from 5 atomic % to 40 atomic %.
-19. (canceled)
A junction field effect transistor comprising:
- a crystalline semiconductor material of a first conductivity type located on a surface of an insulating substrate;
- and
- a gate junction located on a surface of the crystalline semiconductor material, wherein said gate junction comprises a Schottky contact, and said Schottky contact is selected from one of a metal layer portion, a metal semiconductor alloy layer portion, and a doped metal semiconductor alloy portion of a second conductivity type, wherein said second conductivity type is opposite from said first conductivity type.
Dependencies are inferred from the claim text.