Thin film hybrid junction field effect transistor
AssigneeInternational Business Machines Corporation
InventorsBahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
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Abstract
Junction field effect transistors are provided which include a gate junction located on a surface of a crystalline semiconductor material of a first conductivity type. The gate junction can be selected from one of a doped hydrogenated crystalline semiconductor material layer portion of a second conductivity type which is opposite the first conductivity type, a doped hydrogenated non-crystalline semiconductor material layer portion of a second conductivity type which is opposite the first conductivity type, and a Schottky contact.
Claims18
A junction field effect transistor comprising:
- a crystalline semiconductor material of a first conductivity type located on a surface of an insulating substrate;
- a gate junction located on a surface of the crystalline semiconductor material, wherein said gate junction comprises a doped hydrogenated non-crystalline semiconductor material layer portion of a second conductivity type, wherein said second conductivity type is opposite from the first conductivity type;
- and
- a first source/drain contact located on a first side of the gate junction and having a bottommost surface in direct contact with a portion of said surface of said crystalline semiconductor material containing said gate junction, and a second source/drain contact located on second side of said gate junction that is opposite to said first side and having a bottommost surface in direct contact with another portion of said surface of said crystalline semiconductor material containing said gate junction, wherein no surface of said gate junction directly contacts said first source/drain contact and said second source/drain contact.
A junction field effect transistor comprising:
- a crystalline semiconductor material of a first conductivity type located on a surface of an insulating substrate;
- and
- a gate junction located on a surface of the crystalline semiconductor material, wherein said gate junction comprises a doped hydrogenated non-crystalline semiconductor material layer portion of a second conductivity type in direct contact with a portion of said surface of said crystalline semiconductor material, wherein said second conductivity type is opposite from the first conductivity type.
Dependencies are inferred from the claim text.