Bipolar junction transistor arrays

A structure comprising:

• a semiconductor layer including a first section and a second section;
• a substrate;
• a dielectric layer disposed between the semiconductor layer and the substrate;
• a first well in the substrate;
• a second well in the substrate;
• a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer positioned between the first collector and the first emitter, the first base layer extending through the dielectric layer from the first emitter to the first collector;
• a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer positioned between the second collector and the second emitter, the second base layer extending through the dielectric layer from the second emitter to the second collector, and the second base layer connected to the first base layer by the first section of the semiconductor layer to define a first base line;
• a third bipolar junction transistor positioned adjacent to the first bipolar junction transistor, the third bipolar junction transistor including a third collector in the substrate, a third emitter, and a third base layer, and the third base layer extending through the dielectric layer from the third emitter to the third collector;
• and
• a fourth bipolar junction transistor including a fourth collector in the substrate, a fourth emitter, and a fourth base layer positioned between the fourth collector and the fourth emitter, the fourth base layer extending through the dielectric layer from the fourth emitter to the fourth collector, and the fourth base layer connected to the third base layer by the second section of the semiconductor layer to define a second base line,
• wherein the first collector and the third collector are portions of the first well, and the second collector and the fourth collector are portions of the second well.

A method comprising:

• forming a first bipolar junction transistor including a first collector in a substrate, a first emitter, and a first base layer positioned between the first collector and the first emitter, wherein a dielectric layer is disposed between a semiconductor layer and the substrate, and the first base layer extends through the dielectric layer from the first emitter to the first collector;
• and
• forming a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer positioned between the second collector and the second emitter, wherein the second base layer extends through the dielectric layer from the second emitter to the second collector, and the second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line,
• wherein a dummy gate structure is positioned between the first emitter and the second emitter.