H10D 30/0614
Using processes wherein the final gate is made after the completion of
Official title: {using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates}
H10D30/0614 (Using processes wherein the final gate is made after the completion of) appears on 184 US grants and 102 published applications in this corpus.
Search patents in H10D- Granted patents
- 184
- Published applications
- 102
- Assignees
- 86
- Inventors
- 366
- Latest grant
- 4 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
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| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
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| 1992 | 3 | 0 |
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| 2001 | 7 | 3 |
| 2002 | 7 | 5 |
| 2003 | 5 | 7 |
| 2004 | 5 | 7 |
| 2005 | 1 | 4 |
| 2006 | 2 | 1 |
| 2007 | 2 | 2 |
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| 2009 | 1 | 3 |
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| 2012 | 2 | 2 |
| 2013 | 3 | 0 |
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| 2019 | 5 | 4 |
| 2020 | 13 | 4 |
| 2021 | 3 | 3 |
| 2022 | 3 | 2 |
| 2023 | 0 | 3 |
| 2024 | 1 | 4 |
| 2025 | 3 | 2 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Self-aligned recessed gate process150US 4,656,076 ATriquint Semiconductors, Inc. · 1987
- Method of manufacturing self-aligned GaAs MESFET93US 4,863,879 AFord Microelectronics, Inc. · 1989
- Method of making a self-aligned MESFET using a substitutional gate with side walls86US 4,745,082 AFord Microelectronics, Inc. · 1988
- Self-aligned transistor method72US 4,711,701 ATexas Instruments Incorporated · 1987