Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a source electrode and a drain electrode on a semiconductor substrate;
• forming, on the source electrode, the drain electrode, and the semiconductor substrate, a first insulating film including a first opening at a position between the source electrode and the drain electrode;
• forming, on the first insulating film, a first resist including a second opening above the first opening, the second opening being larger than the first opening;
• forming a gate electrode in the first opening, in the second opening, above the second opening, and on the first resist so as to allow the gate electrode to be in contact with the semiconductor substrate via the first opening;
• forming a second resist on the gate electrode, the second resist covering at least a region above the second opening in a vertical direction, the second resist being wider than the second opening;
• etching the gate electrode and up to the middle of the first resist, using the second resist as a mask;
• removing the first resist and the second resist;
• and
• forming a second insulating film covering an exposed portion of the gate electrode and an exposed portion of the first insulating film,
• wherein:
• the forming the second resist includes forming the second resist such that a side surface of the second resist on a side of the source electrode is located at a same position as a side surface of the second opening in a horizontal direction, and
• the etching the gate electrode and up to the middle of the first resist includes etching the gate electrode and up to the middle of the first resist using a normal-incidence ion milling method, and
• the method further comprises:
• after the forming the second insulating film, forming an SFP electrode on a region from a portion of the second insulating film located above the gate electrode to a portion of the second insulating film located between the gate electrode and the source electrode.

A method for manufacturing a semiconductor device, comprising:

• forming a source electrode and a drain electrode on a semiconductor substrate;
• forming, on the source electrode, the drain electrode, and the semiconductor substrate, a first insulating film including a first opening at a position between the source electrode and the drain electrode;
• forming, on the first insulating film, a first resist including a second opening above the first opening, the second opening being larger than the first opening;
• forming a gate electrode in the first opening, in the second opening, above the second opening, and on the first resist so as to allow the gate electrode to be in contact with the semiconductor substrate via the first opening;
• forming a second resist on the gate electrode, the second resist covering at least a region above the second opening in a vertical direction, the second resist being wider than the second opening;
• etching the gate electrode and up to the middle of the first resist, using the second resist as a mask;
• removing the first resist and the second resist;
• and
• a forming a second insulating film covering an exposed portion of the gate electrode and an exposed portion of the first insulating film,
• wherein:
• the forming the second resist includes forming the second resist such that a side surface of the second resist on a side of the source electrode is located at an inside of the second opening in a horizontal direction,
• the etching the gate electrode and up to the middle of the first resist includes etching the gate electrode and up to the middle of the first resist using an oblique-incidence ion milling method, and
• the method further comprises:
• after the forming the second insulating film, forming an SFP electrode on a region from a portion of the second insulating film located above the gate electrode to a portion of the second insulating film located between the gate electrode and the source electrode.