Method for fabricating semiconductor device
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsWind Zhu, Feng Gao, Wen Yi Tan
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Abstract
A method for fabricating a semiconductor device includes steps as follows. A gate material layer is formed on a substrate, wherein the gate material layer includes an amorphous material having a phase transition temperature, and the amorphous material converts into a polycrystalline material at the phase transition temperature. A first hard mask is formed on the gate material layer at a first process temperature, wherein the first process temperature is less than the phase transition temperature. A second hard mask is formed on the first hard mask at a second process temperature, wherein the second process temperature is less than the phase transition temperature.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming a gate material layer on a substrate, wherein the gate material layer comprises an amorphous material having a phase transition temperature, and the amorphous material converts into a polycrystalline material at the phase transition temperature;
- forming a first hard mask on the gate material layer at a first process temperature, wherein the first process temperature is less than the phase transition temperature;
- and
- forming a second hard mask on the first hard mask at a second process temperature, wherein the second process temperature is less than the phase transition temperature.
Dependencies are inferred from the claim text.