Method for forming a semiconductor device having a heteroepitaxial layer
AssigneeMotorola, Inc.
InventorsHang Ming Liaw, Curtis Lee Burt, Stella Q. Hong, Clifford P. Stein
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Abstract
A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strained semiconductor layer is relaxed using thermal stress.
Claims38
A method for forming a heterojunction semiconductor device comprising the steps of:
- placing a substrate comprising a first material having a first lattice constant into a reactor chamber;
- forming a first layer over the substrate, wherein the first layer comprises a second material having a second lattice constant different than the first lattice constant such that the first layer forms a strained layer;
- and
- relaxing the strained layer while the substrate is within the reactor chamber before exposing the substrate to an oxidizing ambient to form a relaxed layer.
A process for forming a semiconductor device comprising the steps of:
- providing a substrate;
- forming a first strained layer over the substrate;
- relaxing the first strained layer without exposing the first strained layer to an oxidizing ambient to form a relaxed layer;
- forming a second strained layer over the relaxed layer;
- forming a gate control structure over the second strained layer;
- and
- forming a source region and a drain region in the second strained layer.
A method for forming a semiconductor device comprising the steps of:
- providing a substrate comprising a first material having a first lattice constant, the substrate further including a relaxed layer comprising a second material having a second lattice constant different than the first lattice constant, and a first layer comprising a third material having a third lattice constant different than the second lattice constant formed over the relaxed layer, wherein the relaxed layer is formed by forming a strained layer over the substrate and relaxing the strained layer by thermal stress without exposing the strained layer to an oxidizing ambient;
- forming a gate control structure over the first layer;
- and
- forming a source and a drain region in the first layer.
A method for forming a semiconductor device comprising the steps of:
- providing a semiconductor substrate having a first lattice parameter;
- forming a first heteroepitaxial film having a second lattice parameter different than the first lattice parameter over the semiconductor substrate within a reactor chamber;
- and
- thermally stressing the first heteroepitaxial film without exposing the first heteroepitaxial film to an oxidizing ambient to provide a first relaxed film.
A method for forming a semiconductor device including a relaxed heteroepitaxy layer comprising the steps of:
- providing a semiconductor wafer including a substrate, a first relaxed heteroepitaxy layer formed over the substrate and a device layer formed over the first relaxed heteroepitaxy layer, wherein the substrate and the device layer have different lattice constants, and wherein the first relaxed heteroepitaxy layer is formed by forming a first strained heteroepitaxy layer over the substrate and relaxing the first strained heteroepitaxy layer by thermal stress without exposing the first strained heteroepitaxy layer to an oxidizing ambient;
- forming active device regions in the device layer;
- and
- forming contacts to the active device regions.
Dependencies are inferred from the claim text.