H10D 30/051
Of fets having pn junction gates
Official title: {of FETs having PN junction gates (H10D30/015 takes precedence)}
H10D30/051 (Of fets having pn junction gates) appears on 840 US grants and 906 published applications in this corpus.
Search patents in H10D- Granted patents
- 840
- Published applications
- 906
- Assignees
- 271
- Inventors
- 1,114
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 9 | 0 |
| 1991 | 8 | 0 |
| 1992 | 8 | 0 |
| 1993 | 9 | 0 |
| 1994 | 11 | 0 |
| 1995 | 6 | 0 |
| 1996 | 3 | 0 |
| 1997 | 8 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 5 | 0 |
| 2001 | 7 | 1 |
| 2002 | 9 | 16 |
| 2003 | 16 | 21 |
| 2004 | 19 | 27 |
| 2005 | 23 | 28 |
| 2006 | 15 | 26 |
| 2007 | 24 | 17 |
| 2008 | 11 | 46 |
| 2009 | 27 | 21 |
| 2010 | 38 | 26 |
| 2011 | 18 | 30 |
| 2012 | 22 | 33 |
| 2013 | 30 | 48 |
| 2014 | 43 | 50 |
| 2015 | 51 | 49 |
| 2016 | 41 | 33 |
| 2017 | 45 | 41 |
| 2018 | 42 | 36 |
| 2019 | 34 | 41 |
| 2020 | 31 | 26 |
| 2021 | 36 | 59 |
| 2022 | 35 | 39 |
| 2023 | 38 | 47 |
| 2024 | 33 | 71 |
| 2025 | 31 | 34 |
| 2026 | 20 | 40 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Field effect transistor having same gate and source doping, cell structure, and preparation method29 Sep 2026US 12,751,031 B2PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method23 Jun 2026US 12,666,696 B2Monolithic Power Systems, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method23 Jun 2026US 12,666,697 B2Monolithic Power Systems, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method16 Jun 2026US 12,660,300 B2Monolithic Power Systems, Inc.
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Methods for fabricating vertical semiconductor device with robust gate region and edge termination region and structures24 Sep 2026US 2026/0293220 A1Semiconductor Components Industries, LLC
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical field effect transistor device and method of fabrication20 Aug 2026US 2026/0247655 A1Power Integrations, Inc.
Most cited
By later US patents
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006
- Vertical field effect transistor and diode197US 6,097,046 ATexas Instruments Incorporated · 2000
- Methods of forming strained-semiconductor-on-insulator finFET device structures173US 7,074,623 B2AmberWave Systems Corporation · 2006
- Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits170US 6,703,688 B1AmberWave Systems Corporation · 2004
- CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same127US 7,642,140 B2Samsung Electronics Co., Ltd. · 2010