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US 2026/0296898 A1Published application
High Purity SiOC and SiC, Methods Compositions and Applications
AssigneePallidus, Inc.
InventorsMark S. Land, Ashish P. Diwanji, Andrew R. Hopkins, Walter J. Sherwood, Douglas M. Dukes, Glenn Sandgren, Brian L. Benac
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Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Claims2
A method of making an article comprising ultra pure silicon carbide, the method comprising:
- a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;
- b. curing the combination of the first and second liquids to provided a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;
- c. transforming the SiOC solid material to an ultra pure polymer derived SiC having less that 99.9999% impurities;
- and,
- d. forming a singe crystal SiC structure by vapor deposition of the ultra pure polymer derived SiC;
- wherein the vapor deposed structure is defect free and has less than 99.9999% impurities.
3 more elements
2-36. (canceled)
Dependencies are inferred from the claim text.