Methods of forming strained-semiconductor-on-insulator finFET device structures

A method for forming a structure, the method comprising:

• providing a substrate having a dielectric layer disposed thereon, and a first strained semiconductor layer disposed in contact with the dielectric layer;
• and
• forming a fin-field-effect transistor on the substrate by:
• patterning the first strained semiconductor layer to define a source region, a drain region, and at least one fin disposed between the source and the drain regions,
• forming a dielectric layer, at least a portion of the dielectric layer being disposed over the fin, and
• forming a gate over the dielectric layer portion disposed over the fin.