Back to results
US 6,995,430 B2Granted
Strained-semiconductor-on-insulator device structures
AssigneeAmberWave Systems Corporation
InventorsThomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald
Life of this patent
Estimating the term…
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Claims14
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein the strained semiconductor layer comprises approximately 100% silicon and has a misfit dislocation density of less than about 105 cm/cm2.
1 more element
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein the strained semiconductor layer comprises approximately 100% silicon and has a threading dislocation density selected from the range of about 10 dislocations/cm2 to about 107 dislocations/cm2.
1 more element
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein the semiconductor layer comprises approximately 100% silicon and has a surface roughness selected from the range of approximately 0.01 nm to approximately 1 nm.
1 more element
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein the strained semiconductor layer comprises approximately 100% silicon and has a thickness uniformity across the substrate of better than approximately ±10%.
1 more element
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein the strained semiconductor layer comprises approximately 100% silicon and has a thickness of less than approximately 200 Å.
1 more element
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein the semiconductor layer comprises approximately 100% silicon and has a surface germanium concentration of less than approximately 1×1012 atoms/cm2.
1 more element
A structure comprising:
- a substrate having a dielectric layer disposed thereon;
- and
- a strained semiconductor layer disposed in contact with the dielectric layer,
- wherein an interface between the strained semiconductor layer and the dielectric layer has a density of bonding voids of less than 0.3 voids/cm2.
1 more element
Dependencies are inferred from the claim text.