H10D 30/0516
Of fets having pn heterojunction gates
Official title: {of FETs having PN heterojunction gates}
H10D30/0516 (Of fets having pn heterojunction gates) appears on 134 US grants and 129 published applications in this corpus.
Search patents in H10D- Granted patents
- 134
- Published applications
- 129
- Assignees
- 61
- Inventors
- 197
- Latest grant
- 27 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 4 | 8 |
| 2003 | 8 | 14 |
| 2004 | 13 | 12 |
| 2005 | 5 | 12 |
| 2006 | 7 | 10 |
| 2007 | 8 | 3 |
| 2008 | 3 | 1 |
| 2009 | 4 | 0 |
| 2010 | 2 | 2 |
| 2011 | 2 | 3 |
| 2012 | 2 | 4 |
| 2013 | 1 | 2 |
| 2014 | 10 | 10 |
| 2015 | 8 | 6 |
| 2016 | 6 | 3 |
| 2017 | 9 | 8 |
| 2018 | 7 | 4 |
| 2019 | 7 | 7 |
| 2020 | 13 | 3 |
| 2021 | 3 | 4 |
| 2022 | 4 | 1 |
| 2023 | 0 | 2 |
| 2024 | 2 | 0 |
| 2025 | 2 | 5 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for manufacturing metal gate of PMOS6 May 2025US 12,295,153 B2Shanghai Huali Integrated Circuit Corporation
- Manufacturable thin film gallium and nitrogen containing devices9 Apr 2024US 11,955,521 B1KYOCERA SLD Laser, Inc.
- Manufacturable thin film gallium and nitrogen containing devices2 Apr 2024US 11,948,980 B1KYOCERA SLD Laser, Inc.
- Gallium oxide junction field effect transistor25 Jun 2026US 2026/0182006 A1Power Cubesemi Inc.
- Manufacturable gallium containing electronic devices4 Jun 2026US 2026/0156886 A1KYOCERA SLD Laser, Inc.
- Trench field-effect transistor (fet)14 May 2026US 2026/0136608 A1Semiconductor Components Industries, LLC
- Small period superjunction device9 Apr 2026US 2026/0101554 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Manufacturable gallium and nitrogen containing single frequency laser diode12 Feb 2026US 2026/0047178 A1KYOCERA SLD Laser, Inc.
Most cited
By later US patents
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006
- Methods of forming strained-semiconductor-on-insulator finFET device structures173US 7,074,623 B2AmberWave Systems Corporation · 2006
- Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits170US 6,703,688 B1AmberWave Systems Corporation · 2004
- CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same127US 7,642,140 B2Samsung Electronics Co., Ltd. · 2010
- Si/SiGe vertical junction field effect transistor123US 5,714,777 AInternational Business Machines Corporation · 1998