Manufacturable gallium and nitrogen containing single frequency laser diode

A method for manufacturing an optical device, the method comprising:

• providing a carrier wafer;
• providing a first substrate having a first surface region;
• forming a first gallium and nitrogen containing epitaxial material overlying the first surface region, the first epitaxial material comprising a first release material overlying the first substrate and one or more n-type gallium and nitrogen containing layers, one or more light emitting gallium and nitrogen containing layers comprising an active region configured to emit electromagnetic radiation at a first wavelength, and one or more p-type gallium and nitrogen containing layers overlying the first release material;
• patterning the first epitaxial material and forming mesas to form a plurality of first dice arranged in an array;
• forming a first interface region overlying the first epitaxial material;
• bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures;
• releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer;
• forming grating features in a material overlying the one or more n-type gallium and nitrogen containing layers of each of the mesa regions, or in a material overlying the one or more n-type gallium and nitrogen containing layers and in the one or more n-type gallium and nitrogen containing layers of each of the mesa regions;
• and
• forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation;
• wherein the grating features are configured to provide feedback to the electromagnetic radiation.