H10D 30/0512
Of fets having pn homojunction gates
Official title: {of FETs having PN homojunction gates}
H10D30/0512 (Of fets having pn homojunction gates) appears on 496 US grants and 570 published applications in this corpus.
Search patents in H10D- Granted patents
- 496
- Published applications
- 570
- Assignees
- 169
- Inventors
- 582
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 4 | 0 |
| 1991 | 4 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 2 |
| 2003 | 4 | 1 |
| 2004 | 5 | 4 |
| 2005 | 8 | 7 |
| 2006 | 4 | 5 |
| 2007 | 7 | 12 |
| 2008 | 4 | 39 |
| 2009 | 21 | 18 |
| 2010 | 27 | 17 |
| 2011 | 14 | 22 |
| 2012 | 14 | 21 |
| 2013 | 22 | 35 |
| 2014 | 26 | 34 |
| 2015 | 37 | 34 |
| 2016 | 25 | 23 |
| 2017 | 33 | 29 |
| 2018 | 30 | 24 |
| 2019 | 22 | 32 |
| 2020 | 15 | 18 |
| 2021 | 25 | 46 |
| 2022 | 28 | 32 |
| 2023 | 28 | 28 |
| 2024 | 26 | 42 |
| 2025 | 17 | 20 |
| 2026 | 12 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method23 Jun 2026US 12,666,696 B2Monolithic Power Systems, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method23 Jun 2026US 12,666,697 B2Monolithic Power Systems, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method16 Jun 2026US 12,660,300 B2Monolithic Power Systems, Inc.
- Methods to process 3D semiconductor devices and structures which have metal layers16 Jun 2026US 12,660,326 B2Monolithic 3D Inc.
- Methods for fabricating vertical semiconductor device with robust gate region and edge termination region and structures24 Sep 2026US 2026/0293220 A1Semiconductor Components Industries, LLC
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical field effect transistor device and method of fabrication20 Aug 2026US 2026/0247655 A1Power Integrations, Inc.
- Superjunction-JFET, Method for Producing a Superjunction-JFET and Electronic Circuit13 Aug 2026US 2026/0239676 A1
- Vertical junction field effect transistor and manufacturing method thereof25 Jun 2026US 2026/0181967 A1Richtek Technology Corporation
Most cited
By later US patents
- FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same115US 5,599,724 AKabushiki Kaisha Toshiba · 1997
- Short channel junction field effect transistor85US 4,959,697 AVTC Inc. · 1990
- Method of constructing a semiconductor device and structure80US 8,273,610 B2Monolithic 3D Inc. · 2012
- Vertical gate-all-around TFET79US 9,385,195 B1STMicroelectronics S.r. l. · 2016
- Vertical replacement-gate junction field-effect transistor69US 7,033,877 B2Agere Systems Inc. · 2006