Vertical junction field effect transistor and manufacturing method thereof

A method for manufacturing a vertical junction field-effect transistor (JFET), comprising:

• providing an N+ type substrate made of a semiconductor material;
• forming an N type bulk region on and connected to the N+ type substrate;
• forming an N type drift region on and connected to the N type bulk region;
• forming two P type buried regions and two P type base regions;
• forming two P+ type gate regions using an ion implantation process, respectively connected to the corresponding two P type base regions;
• and
• forming an N+ type source region within the N type drift region using an ion implantation process;
• wherein the two P type buried regions are formed beneath the N type drift region, spaced apart in a horizontal direction, unconnected to each other, and positioned at the left and right sides of the N type drift region, with a portion of the N type bulk region separating the two P type buried regions;
• wherein the two P type base regions are respectively formed and connected above the corresponding two P type buried regions;
• wherein the two P+ type gate regions are respectively electrically connected to the corresponding two P type buried regions via the corresponding two P type base regions;
• wherein, when the vertical JFET is in a conductive state, a channel is formed exclusively in a vertical direction between the N+ type source region and the N+ type substrate through the N type drift region and the N type bulk region, enabling the conduction of current;
• wherein the structure of the vertical JFET ensures that the channel is formed exclusively in the vertical direction, with the conduction current flowing vertically from the N+ type source region to the N+ type substrate;
• and
• wherein the two P type buried regions are respectively connected to the corresponding two P type base regions, forming two independent and continuous P type regions used to improve the conductive resistance, breakdown voltage, and leakage current characteristics of the vertical JFET.