Superjunction-JFET, Method for Producing a Superjunction-JFET and Electronic Circuit

A superjunction JFET (junction field-effect transistor), comprising:

• a threshold voltage;
• and
• a depletion voltage,
• wherein a magnitude of the depletion voltage is lower than 4 times a magnitude of the threshold voltage.

A method, comprising:

• forming a plurality of implantation trenches in a semiconductor body such that the implantation trenches are spaced apart from each other in a first lateral direction of the semiconductor body and separated from each other by semiconductor mesa regions;
• forming a first region of a first doping type in each of the semiconductor mesa regions using a first implantation process;
• forming a second region of a second doping type complementary to the first doping type using a second implantation process;
• filling the implantation trenches with a monocrystalline semiconductor material in an epitaxial growth process;
• forming a plurality of gate trenches in the semiconductor body;
• forming a plurality of further regions of the second doping type along sidewalls and bottoms of the gate trenches, such that each second region adjoins at least one further region;
• and
• forming a gate electrode in each of the gate trenches.