Method of constructing a semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist, Israel Beinglass, Ze'ev Wurman, Paul Lim
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
Claims12
A method of manufacturing a semiconductor device, the method comprising:
- providing a first monocrystalline layer comprising first semiconductor regions;
- overlaying said first monocrystalline layer with at least one metal layer comprising aluminum or copper;
- transferring a second monocrystalline layer comprising second semiconductor regions to a carrier;
- annealing said second monocrystalline layer while on said carrier as part of forming at least one transistor on said second monocrystalline layer;
- and
- after said annealing, transferring said second monocrystalline layer to overlay said metal layer;
- wherein said annealing comprises a thermal anneal which is greater than 400 degrees Centigrade and wherein said first and second semiconductor regions comprise ion implanted and activated dopants.
Dependencies are inferred from the claim text.