H10D 30/0515
Of vertical fets having pn homojunction gates
Official title: {of vertical FETs having PN homojunction gates}
H10D30/0515 (Of vertical fets having pn homojunction gates) appears on 183 US grants and 219 published applications in this corpus.
Search patents in H10D- Granted patents
- 183
- Published applications
- 219
- Assignees
- 78
- Inventors
- 267
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 4 | 2 |
| 2005 | 7 | 5 |
| 2006 | 4 | 2 |
| 2007 | 2 | 3 |
| 2008 | 1 | 4 |
| 2009 | 3 | 3 |
| 2010 | 6 | 5 |
| 2011 | 2 | 5 |
| 2012 | 4 | 8 |
| 2013 | 5 | 15 |
| 2014 | 14 | 23 |
| 2015 | 21 | 21 |
| 2016 | 14 | 13 |
| 2017 | 15 | 13 |
| 2018 | 11 | 8 |
| 2019 | 13 | 16 |
| 2020 | 8 | 4 |
| 2021 | 3 | 10 |
| 2022 | 8 | 7 |
| 2023 | 8 | 8 |
| 2024 | 7 | 15 |
| 2025 | 5 | 9 |
| 2026 | 4 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vertical field effect transistor device and method of fabrication26 May 2026US 12,641,821 B2Power Integrations, Inc.
- Semiconductor structure and method of forming thereof17 Feb 2026US 12,557,318 B2Hon Young Semiconductor Corporation
- Trench junction field effect transistor having a mesa region10 Feb 2026US 12,550,387 B2Infineon Technologies Austria AG
- Regrowth uniformity in GaN vertical devices6 Jan 2026US 12,520,513 B2Semiconductor Components Industries, LLC
- Vertical trench device configurations for radiation-environment applications11 Nov 2025US 12,469,705 B2SCDevice LLC
- Methods for fabricating vertical semiconductor device with robust gate region and edge termination region and structures24 Sep 2026US 2026/0293220 A1Semiconductor Components Industries, LLC
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical field effect transistor device and method of fabrication20 Aug 2026US 2026/0247655 A1Power Integrations, Inc.
- Superjunction-JFET, Method for Producing a Superjunction-JFET and Electronic Circuit13 Aug 2026US 2026/0239676 A1
- Vertical junction field effect transistor and manufacturing method thereof25 Jun 2026US 2026/0181967 A1Richtek Technology Corporation
Most cited
By later US patents
- FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same115US 5,599,724 AKabushiki Kaisha Toshiba · 1997
- Vertical gate-all-around TFET79US 9,385,195 B1STMicroelectronics S.r. l. · 2016
- Vertical replacement-gate junction field-effect transistor69US 7,033,877 B2Agere Systems Inc. · 2006
- Semiconductor device51US 8,648,349 B2Sumitomo Electric Industries, Ltd. · 2014
- SOI type vertical channel field effect transistor and process of manufacturing the same38US 5,312,782 ASony Corporation · 1994