H10D 30/0411
Of fets having floating gates
Official title: {of FETs having floating gates}
H10D30/0411 (Of fets having floating gates) appears on 3,705 US grants and 3,564 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,705
- Published applications
- 3,564
- Assignees
- 509
- Inventors
- 4,268
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 3 | 0 |
| 1989 | 7 | 0 |
| 1990 | 4 | 0 |
| 1991 | 7 | 0 |
| 1992 | 15 | 0 |
| 1993 | 24 | 0 |
| 1994 | 28 | 0 |
| 1995 | 38 | 0 |
| 1996 | 35 | 0 |
| 1997 | 27 | 0 |
| 1998 | 52 | 0 |
| 1999 | 97 | 0 |
| 2000 | 78 | 0 |
| 2001 | 120 | 33 |
| 2002 | 92 | 100 |
| 2003 | 115 | 90 |
| 2004 | 112 | 155 |
| 2005 | 106 | 141 |
| 2006 | 112 | 169 |
| 2007 | 116 | 149 |
| 2008 | 102 | 159 |
| 2009 | 108 | 153 |
| 2010 | 132 | 134 |
| 2011 | 128 | 152 |
| 2012 | 124 | 127 |
| 2013 | 161 | 206 |
| 2014 | 189 | 233 |
| 2015 | 236 | 282 |
| 2016 | 259 | 210 |
| 2017 | 182 | 124 |
| 2018 | 135 | 112 |
| 2019 | 122 | 129 |
| 2020 | 125 | 107 |
| 2021 | 92 | 132 |
| 2022 | 98 | 131 |
| 2023 | 122 | 112 |
| 2024 | 91 | 91 |
| 2025 | 56 | 59 |
| 2026 | 40 | 74 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Neuromorphic synapse device with excellent linearity characteristics and operating method thereof15 Sep 2026US 12,738,315 B2Korea Advanced Institute of Science and Technology
- Method for reducing damage to floating gate polysilicon during etching15 Sep 2026US 12,740,085 B2Shanghai Huali Integrated Circuit Corporation
- Reconfigurable complementary metal oxide semiconductor device and method15 Sep 2026US 12,740,143 B2GlobalFoundries Dresden Module One Limited Liability Company & Co. KG
- Non-volatile memory cell with ONO compound insulation layer between floating and control gates and a method of fabrication1 Sep 2026US 12,727,159 B2Silicon Storage Technology, Inc.
- Non-volatile memory device1 Sep 2026US 12,727,204 B2Iotmemory Technology Inc.
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices having through-insulating structures and data storage systems including the same8 Oct 2026US 2026/0314382 A1Samsung Electronics Co., Ltd.
- Semiconductor device and electronic system including the same1 Oct 2026US 2026/0304759 A1Samsung Electronics Co., Ltd.
- Method for manufacturing non-volatile memory device24 Sep 2026US 2026/0293217 A1Iotmemory Technology Inc.
- Semiconductor device with air-void spacer24 Sep 2026US 2026/0293232 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Atomic layer deposited dielectric layers621US 7,192,892 B2Micron Technology, Inc. · 2007
- Electronic apparatus with deposited dielectric layers586US 7,405,454 B2Micron Technology, Inc. · 2008
- Reliable semiconductor device and method of manufacturing the same526US 6,713,824 B1Kabushiki Kaisha Toshiba · 2004
- Air gap isolation in non-volatile memory using sacrificial films473US 9,123,577 B2SanDisk Technologies LLC · 2015
- Nonvolatile semiconductor memory471US 8,779,502 B2Kabushiki Kaisha Toshiba · 2014