Reliable semiconductor device and method of manufacturing the same

A non-volatile semiconductor memory device comprising:

• a semiconductor substrate;
• source/drain regions formed in a surface of the substrate;
• a first gate insulating film disposed on a surface of the substrate between the source/drain regions;
• a floating gate electrode disposed on the first gate insulating film, the floating gate electrode being set to have a film stress of 200 MPa or less in terms of absolute value, such that a total charge amount is 25 C/cm 2 or more, the total charge amount being an amount of electric charge passing through the fist gate insulating film when intrinsic dielectric breakdown of the first gate insulating film takes place;
• a second gate insulating film disposed on the floating gate electrode;
• and a control gate electrode disposed on the gate insulating film.

A semiconductor device comprising:

• a semiconductor substrate;
• source/drain regions formed in a surface of the substrate;
• a gate insulating film disposed on a surface of the substrate between the source/drain regions;
• and
• a gate electrode disposed on the gate insulating film, the gate electrode being set to have a film stress of 200 MPa or less in terms of absolute value, in order to increase a total charge amount of electric charge passing through the gate insulating film when intrinsic dielectric breakdown of the gate insulating film takes place,
• wherein the gate insulating film consists essentially of a silicon oxide film, and wherein the gate insulating film has a property such that the total charge amount is 25 C/cm2 or more where the gate insulating film has a thickness of 8 nm and is supplied with an electric field of 12 MV/cm.

A non-volatile semiconductor memory device comprising:

• a semiconductor substrate;
• source/drain regions formed in a surface of the substrate;
• a first gate insulating film disposed on a surface of the substrate between the source/drain regions;
• a floating gate electrode disposed on the first gate insulating film, the floating gage electrode being set to have a film stress of 200 MPa or less in terms of absolute value, in order to increase a total charge amount of electric charge passing through the first gate insulating film when intrinsic dielectric breakdown of the first gate insulating film takes place;
• a second gate insulating film disposed on the floating gate electrode;
• and
• a control gate electrode disposed on the second gate insulating film,
• wherein the first gate insulating film consists essentially of the silicon oxide film, and
• wherein the first gate insulating film has a property such that the total charge amount if 25 C/cm2 or more where the first gate insulating film has a thickness of 8 nm and is supplied with an electric field of 12 MV/cm.