H10D 30/024
Of fin field-effect transistors [finfet]
Official title: {of fin field-effect transistors [FinFET]}
H10D30/024 (Of fin field-effect transistors [finfet]) appears on 14,324 US grants and 16,165 published applications in this corpus.
Search patents in H10D- Granted patents
- 14,324
- Published applications
- 16,165
- Assignees
- 603
- Inventors
- 8,777
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 5 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 10 | 2 |
| 2002 | 15 | 13 |
| 2003 | 21 | 22 |
| 2004 | 47 | 84 |
| 2005 | 81 | 193 |
| 2006 | 103 | 176 |
| 2007 | 117 | 242 |
| 2008 | 159 | 264 |
| 2009 | 141 | 210 |
| 2010 | 217 | 188 |
| 2011 | 209 | 235 |
| 2012 | 173 | 189 |
| 2013 | 239 | 364 |
| 2014 | 424 | 645 |
| 2015 | 657 | 1046 |
| 2016 | 1171 | 1255 |
| 2017 | 1317 | 1330 |
| 2018 | 1277 | 1257 |
| 2019 | 1302 | 1325 |
| 2020 | 1314 | 1549 |
| 2021 | 1144 | 1284 |
| 2022 | 1021 | 1180 |
| 2023 | 998 | 1025 |
| 2024 | 935 | 1001 |
| 2025 | 827 | 789 |
| 2026 | 376 | 297 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with embedded sigma-shaped structure6 Oct 2026US 12,757,431 B2Nanya Technology Corporation
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Controlled doping in a gate dielectric layer8 Oct 2026US 2026/0313932 A1Taiwan Semiconductor Manufacturing Company.Ltd
- System and methods of manufacturing semiconductor devices8 Oct 2026US 2026/0313933 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014