H10D 30/0245
By further thinning the channel after patterning the channel
Official title: {by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins}
H10D30/0245 (By further thinning the channel after patterning the channel) appears on 868 US grants and 942 published applications in this corpus.
Search patents in H10D- Granted patents
- 868
- Published applications
- 942
- Assignees
- 82
- Inventors
- 1,127
- Latest grant
- 18 Aug 2026
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| Year | Granted patents | Published applications |
|---|---|---|
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| 2003 | 4 | 1 |
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| 2006 | 10 | 12 |
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| 2023 | 48 | 48 |
| 2024 | 52 | 47 |
| 2025 | 35 | 22 |
| 2026 | 14 | 15 |
By publication year. 2026 runs to 8 Oct.
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- Finfet with long channel length structure9 Jul 2026US 2026/0198030 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- FinFET with high mobility and strain channel582US 8,729,634 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
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- Multiple gate field-effect transistors having oxygen-scavenged gate stack305US 9,564,489 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Semiconductor device having MIS field effect transistors or three-dimensional structure258US 6,525,403 B2Kabushiki Kaisha Toshiba · 2003