Fin height and sti depth for performance improvement in semiconductor devices having high-mobility p-channel transistors

A method, comprising:

• providing a substrate having a first region and a second region, the substrate having a first semiconductor material in the first and second regions;
• creating a mask that covers the first region of the substrate;
• recessing the second region of the substrate;
• after the recessing of the second region, epitaxially growing a second semiconductor material in the second region, wherein the second semiconductor material is different from the first semiconductor material;
• and
• after the epitaxially growing of the second semiconductor material in the second region, patterning the first and second regions simultaneously to form a first fin in the first region and a second fin in the second region,
• wherein the first fin includes the first semiconductor material extending continuously from the substrate to a top surface of the first fin, the second fin includes a top portion over a bottom portion, the top portion of the second fin includes the second semiconductor material, and the bottom portion of the second fin includes the first semiconductor material.

A method, comprising:

• recessing a pFET region of a substrate to form a recess, the substrate having a first semiconductor material;
• epitaxially growing a second semiconductor material in the recess, the second semiconductor material being different from the first semiconductor material;
• and
• patterning an nFET region and the pFET region of the substrate to form a first fin in the nFET region and a second fin in the pFET region, the first fin including the first semiconductor material, the second fin including a top portion of the second semiconductor material and a bottom portion of the first semiconductor material, and the second fin having a substantially uniform width.