Methods of forming semiconductor devices

A method comprising:

• forming a gate spacer on a lightly doped source/drain region of a semiconductor fin, the gate spacer adjacent a dummy gate, the dummy gate disposed on a channel region of the semiconductor fin;
• removing the dummy gate to expose the channel region of the semiconductor fin;
• after removing the dummy gate, trimming the channel region of the semiconductor fin by performing a plurality of oxidation and etch cycles, the channel region of the semiconductor fin having a lesser width than the lightly doped source/drain region of the semiconductor fin after performing the oxidation and etch cycles;
• and
• forming a metal gate on the channel region of the semiconductor fin.

A method comprising:

• forming a dummy gate on a channel region;
• growing an epitaxial source/drain adjacent the channel region;
• removing the dummy gate to expose the channel region;
• after removing the dummy gate, trimming the channel region by performing a plurality of oxidation and etch cycles, the channel region having a first width before the trimming, the channel region having a second width after the trimming, the second width being less than the first width;
• and
• forming a metal gate on the channel region.