Fin FET devices from bulk semiconductor and method for forming

A method for forming a finFET in semiconductor substrate, the method comprising the steps of:

• forming a fin from the semiconductor substrate, the fin including a fin sidewall, the formation of the fin exposing areas of the semiconductor substrate adjacent the fin;
• damaging at least a portion of the semiconductor substrate areas adjacent the fin;
• and
• oxidizing the semiconductor substrate such that oxide is formed in the damaged portion of the semiconductor substrate to a greater thickness than is formed on the fin sidewall.

A method for forming finFET devices from a bulk semiconductor substrate, the method comprising the steps of:

• forming a height control layer in the semiconductor substrate;
• forming a blocking hardmask layer on the semiconductor substrate;
• etching the blocking hardmask layer and semiconductor substrate to define a plurality of fins such that the height control layer facilitates fin height uniformity, wherein a portion of the blocking hardmask layer remains on each of the plurality of fins and wherein each of the plurality of fins includes a sidewall and wherein etching of the semiconductor substrate exposes areas of the semiconductor substrate adjacent the fin;
• damaging at least a portion of the semiconductor substrate areas adjacent the fin;
• oxidizing the semiconductor substrate such that oxide is formed In the damaged portion of the semiconductor substrate to a greater thickness than is formed on the fin sidewall;
• and
• removing oxide from the fin sidewall while leaving at least a portion of the oxide adjacent to the fin.