H10D 30/0415
Of fets having ferroelectric gate insulators
Official title: {of FETs having ferroelectric gate insulators}
H10D30/0415 (Of fets having ferroelectric gate insulators) appears on 737 US grants and 1,050 published applications in this corpus.
Search patents in H10D- Granted patents
- 737
- Published applications
- 1,050
- Assignees
- 152
- Inventors
- 1,153
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 3 |
| 2002 | 5 | 9 |
| 2003 | 4 | 5 |
| 2004 | 7 | 7 |
| 2005 | 4 | 7 |
| 2006 | 2 | 9 |
| 2007 | 6 | 5 |
| 2008 | 5 | 4 |
| 2009 | 0 | 4 |
| 2010 | 6 | 8 |
| 2011 | 4 | 11 |
| 2012 | 7 | 9 |
| 2013 | 7 | 4 |
| 2014 | 11 | 9 |
| 2015 | 4 | 11 |
| 2016 | 12 | 26 |
| 2017 | 21 | 19 |
| 2018 | 26 | 43 |
| 2019 | 31 | 56 |
| 2020 | 54 | 84 |
| 2021 | 65 | 113 |
| 2022 | 85 | 135 |
| 2023 | 108 | 150 |
| 2024 | 101 | 128 |
| 2025 | 93 | 119 |
| 2026 | 56 | 72 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,405 B2Samsung Electronics Co., Ltd.
- Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material6 Oct 2026US 12,757,449 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method for manufacturing the same22 Sep 2026US 12,745,448 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having nanosheet transistor and improved dipole layer15 Sep 2026US 12,740,103 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having high-k gate dielectric layers15 Sep 2026US 12,740,140 B2SK hynix Inc.
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication Method for a Memory Structure Including High Density Three-Dimensional NOR Memory Strings of Junctionless Ferroelectric Storage Transistors8 Oct 2026US 2026/0311761 A1Sunrise Memory Corporation
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Multi-channel ferroelectric memory structure8 Oct 2026US 2026/0313908 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric devices and methods of forming the same8 Oct 2026US 2026/0313911 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers106US 6,858,906 B2Samsung Electronics Co., Ltd. · 2005
- Ferroelectric memory cell for an integrated circuit91US 10,600,808 B2NaMLab gGmbH · 2020
- Integrated circuit including a ferroelectric memory cell and manufacturing method thereof78US 10,872,905 B2NaMLab gGmbH · 2020
- Device and manufacturing method for a ferroelectric memory68US 5,621,681 ASamsung Electronics Co., Ltd. · 1997
- Doped polar layers and semiconductor device incorporating same64US 11,164,976 B2Kepler Computing Inc. · 2021