H10D 30/0218
Having pocket halo regions selectively formed at the sides of the gates
Official title: {having pocket halo regions selectively formed at the sides of the gates}
H10D30/0218 (Having pocket halo regions selectively formed at the sides of the gates) appears on 228 US grants and 154 published applications in this corpus.
Search patents in H10D- Granted patents
- 228
- Published applications
- 154
- Assignees
- 79
- Inventors
- 411
- Latest grant
- 8 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 1 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 11 | 0 |
| 2001 | 21 | 7 |
| 2002 | 22 | 17 |
| 2003 | 24 | 11 |
| 2004 | 14 | 9 |
| 2005 | 9 | 9 |
| 2006 | 11 | 9 |
| 2007 | 2 | 2 |
| 2008 | 2 | 5 |
| 2009 | 3 | 1 |
| 2010 | 3 | 4 |
| 2011 | 6 | 9 |
| 2012 | 6 | 5 |
| 2013 | 6 | 8 |
| 2014 | 8 | 11 |
| 2015 | 10 | 14 |
| 2016 | 8 | 6 |
| 2017 | 7 | 2 |
| 2018 | 3 | 4 |
| 2019 | 4 | 5 |
| 2020 | 4 | 3 |
| 2021 | 5 | 3 |
| 2022 | 1 | 4 |
| 2023 | 3 | 5 |
| 2024 | 2 | 0 |
| 2025 | 5 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for forming semiconductor structure, and semiconductor structure8 Jul 2025US 12,356,655 B2Changxin Memory Technologies, Inc.
- Semiconductor device and method for fabricating the same8 Jul 2025US 12,356,677 B2United Semiconductor (Xiamen) Co., Ltd.
- Enhanced MOSFET with superior RF performance20 May 2025US 12,310,046 B2QUALCOMM Incorporated
- Asymmetric halo-implant body-source-tied semiconductor-on-insulator (SOI) device6 May 2025US 12,295,155 B2Newport Fab, LLC
- Transistor element, ternary inverter apparatus comprising same, and method for producing same25 Mar 2025US 12,261,174 B2Unist (Ulsan National Institute of Science and Technology)
- Semiconductor device and method for fabricating the same25 Sep 2025US 2025/0301718 A1United Semiconductor (Xiamen) Co., Ltd.
- Manufacturing method of semiconductor device23 Nov 2023US 2023/0378315 A1Samsung Electronics Co., Ltd.
- Enhanced mosfet with superior rf performance2 Nov 2023US 2023/0352583 A1QUALCOMM Incorporated
- Semiconductor device and method of manufacturing the same7 Sep 2023US 2023/0282745 A1Renesas Electronics Corporation
- Semiconductor device and method for fabricating the same3 Aug 2023US 2023/0246090 A1United Semiconductor (Xiamen) Co., Ltd.
Most cited
By later US patents
- Field-effect transistor for alleviating short-channel effects174US 6,548,842 B1National Semiconductor Corporation · 2003
- Material removal method for forming a structure171US 6,261,964 B1Micron Technology, Inc. · 2001
- Method to produce localized halo for MOS transistor160US 6,743,684 B2Texas Instruments Incorporated · 2004
- Method to produce localized halo for MOS transistor143US 7,064,039 B2Texas Instruments Incorporated · 2006
- Method of fabricating a MOS device having a gate-side air-gap structure136US 5,736,446 APowerchip Semiconductor Corp. · 1998