Semiconductor device and method for fabricating the same
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsShih-Hsien Huang, Sheng-Hsu Liu, Wen Yi Tan
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Abstract
A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a spacer adjacent to the gate structure, forming a recess adjacent to the spacer, trimming part of the spacer, and then forming an epitaxial layer in the recess. Preferably, the semiconductor device includes a first protrusion adjacent to one side of the epitaxial layer and a second protrusion adjacent to another side of the epitaxial layer, the first protrusion includes a V-shape under the spacer and an angle included by the V-shape is greater than 30 degrees and less than 90 degrees.
Claims5
A semiconductor device, comprising:
- a gate structure on a substrate;
- a spacer adjacent to the gate structure;
- an epitaxial layer adjacent to the spacer, wherein the epitaxial layer comprises a hexagon;
- a protrusion having an angle greater than 30 degrees and less than 90 degrees under the spacer and adjacent to the hexagon and contacting a bottom surface of the spacer directly, wherein the protrusion is made of a single material and the protrusion and the epitaxial layer are made of same material;
- and
- a cap layer on the epitaxial layer.
Dependencies are inferred from the claim text.