Asymmetric halo-implant body-source-tied semiconductor-on-insulator (SOI) device
AssigneeNewport Fab, LLC
InventorsAllan K. Calvo, Kamei Masayuki
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Abstract
A semiconductor-on-insulator (SOI) device includes a semiconductor layer situated over a buried oxide layer, the buried oxide layer being situated over a substrate. An SOI transistor is situated in the semiconductor layer and includes a transistor body, gate fingers, source regions, and drain regions. The transistor body has a first conductivity type. The source regions and the drain regions have a second conductivity type opposite to the first conductivity type. The transistor body is electrically tied to at least one source region. An asymmetric halo-implant region having the first conductivity type adjoins the at least one source region. No halo-implant region adjoins the drain regions.
Claims20
A semiconductor-on-insulator (SOI) device comprising:
- a semiconductor layer situated over a buried oxide layer, said buried oxide layer being situated over a substrate;
- an SOI transistor situated in said semiconductor layer and including a transistor body, gate fingers, source regions, and drain regions;
- said transistor body having a first conductivity type, said source regions and said drain regions having a second conductivity type opposite to said first conductivity type;
- said transistor body electrically tied to at least one of said source regions;
- an asymmetric halo-implant region having said first conductivity type adjoining said at least one of said source regions, wherein no halo-implant region adjoins said drain regions;
- a heavily-doped body-implant region having said first conductivity type overlapping said at least one of said source regions in an overlap region, wherein said asymmetric halo-implant region adjoins said overlap region.
A semiconductor device comprising:
- a semiconductor substrate;
- a transistor situated in said semiconductor substrate and including a transistor body, gate fingers, source regions, and drain regions;
- said transistor body having a first conductivity type, said source regions and said drain regions having a second conductivity type opposite to said first conductivity type;
- said transistor body electrically tied to at least one of said source regions;
- an asymmetric halo-implant region having said first conductivity type adjoining said at least one of said source regions, wherein no halo-implant region adjoins said drain regions;
- a heavily-doped body-implant region having said first conductivity type overlapping said at least one of said source regions in an overlap region, wherein said asymmetric halo-implant region adjoins said overlap region.
Dependencies are inferred from the claim text.